Robert W. Bower Photo

Robert W. Bower

Born: Jun 12, 1936

Birthplace: Santa Monica

Nationality: United States

Robert W. Bower

Date of Birth : Jun 12, 1936
Birth Place : Santa Monica

Dr. Robert W. Bower was born in Santa Monica, CA and is an applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Department Head at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET, or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California. He has also published over 80 journals and articles, patented over 28 inventions, and authored chapters in 3 different books.

Also known as


  • Robert Bower
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